K1S321615M Datasheet, PDF (5/12 Pages) Samsung semiconductor – 2Mx16 bit Uni-Transistor Random Access Memory

K1S321615M
UtRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Test Input/Output Reference) ^Dout
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Z0=50Ω
Input and output reference voltage: 1.5V
Output load(See right): CL=50pF
* Include scope and jig capacitance
RL=50Ω
50pF*
VL=1.5V
AC CHARACTERISTICS(Vcc=2.7~3.3V, TA=-25 to 85°C)
Parameter List
Symbol
Speed Bins
100ns¹⁾
100ns²⁾
Min
Max
Min
Max
Read Cycle Time
tRC
100
-
100
-
Address Access Time
tAA
-
100
-
100
Chip Select to Output
tCO
-
100
-
100
Output Enable to Valid Output
tOE
-
50
-
50
UB, LB Access Time
tBA
-
100
-
100
Read
Chip Select to Low-Z Output
UB, LB Enable to Low-Z Output
tLZ
10
-
10
-
tBLZ
10
-
10
-
Output Enable to Low-Z Output
tOLZ
5
-
5
-
Chip Disable to High-Z Output
tHZ
0
25
0
25
UB, LB Disable to High-Z Output
tBHZ
0
25
0
25
Output Disable to High-Z Output
tOHZ
0
25
0
25
Output Hold from Address Change
tOH
5
-
5
-
Write Cycle Time
tWC
100
-
110
-
Chip Select to End of Write
tCW
80
-
100
-
Address Set-up Time
tAS
0
-
0
-
Address Valid to End of Write
tAW
80
-
100
-
Write
UB, LB Valid to End of Write
Write Pulse Width
tBW
80
-
100
-
tWP
70
-
100
-
Write Recovery Time
tWR
0
-
0
-
Write to Output High-Z
tWHZ
0
30
0
30
Data to Write Time Overlap
tDW
40
-
40
-
Data Hold from Write Time
tDH
0
-
0
-
End Write to Output Low-Z
tOW
5
-
5
-
1. The characteristics which is restricted for continuous write operation over 20 times, please refer to technical note.
2. The characteristics for continuous write operation.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-5-
Revision 3.0
May 2001