K1S321615M Datasheet, PDF (4/12 Pages) Samsung semiconductor – 2Mx16 bit Uni-Transistor Random Access Memory

K1S321615M
PRODUCT LIST
Part Name
K1S321615M-EE10
Extended Temperature Products(-25~85°C)
Function
48-TBGA with 48 ball, 100ns, 3.0V
UtRAM
RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-25 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
2.7
0
2.2
-0.2³⁾
Typ
Max
Unit
3.0
3.3
V
0
0
V
-
Vcc+0.2²⁾
V
-
0.6
V
CAPACITANCE¹⁾(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ¹⁾ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO CS=VIH, ZZ=VIH, OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
ICC1 ^{Cycle time=1µs, 100% duty, IIO=0mA, CS≤0.2V,}
Average operating current
ZZ≥Vcc-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
-
2
5 mA
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS=VIL, ZZ=VIH, VIN=VIL or VIH
-
18 25 mA
Output low voltage
VOL IOL=2.1mA
-
-
0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4
-
-
V
Standby Current(CMOS) ISB1 CS≥Vcc-0.2V, ZZ≥Vcc-0.2V, Other inputs=Vss to Vcc
- 120 150 µA
Deep Power Down
ISBD ZZ≤0.2V, Other inputs=Vss to Vcc
-
5
20 µA
1. Typical values are tested at VCC=3.0V, TA=25°C and not guaranteed.
-4-
Revision 3.0
May 2001