K4H280438B-TCA0 Datasheet, PDF (47/53 Pages) Samsung semiconductor – 128Mb DDR SDRAM

128Mb DDR SDRAM
11. IBIS: I/V Characteristics for Input and Output Buffers
11.1 Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
Maximum
160
140
120
Typical High
100
80
60
Typical Low
40
Minimum
20
0
0.0
0.5
1.0
1.5
2.0
2.5
Vout(V)
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figrue b.
0.0
0.5
1.0
1.5
2.0
2.5
0
Minumum
-20
-40
-60
Typical Low
-80
-100
-120
-140
-160
Typical High
-180
-200
-220
Maximum
Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
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REV. 1.0 November. 2. 2000