K4H280438B-TCA0 Datasheet, PDF (41/53 Pages) Samsung semiconductor – 128Mb DDR SDRAM

128Mb DDR SDRAM
7.3 DDR SDRAM I_DD spec table
32Mx4
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7
K4H280438B-TCA2
(DDR266A)
typical
worst
85
95
125
140
21
25
40
45
30
35
25
30
35
40
140
155
125
140
185
200
2
2
1
1
250
265
K4H280438B-TCB0
(DDR266B)
typical
worst
85
95
125
140
21
25
40
45
30
35
25
30
35
40
140
155
125
140
185
200
2
2
1
1
250
265
K4H280438B-TCA0
(DDR200)
typical
worst
75
85
120
130
18
22
35
40
25
30
20
25
30
35
115
130
100
115
175
190
2
2
1
1
240
255
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
Optional
16Mx8
Symbol
K4H280838BT-CA2
K4H280838B-TCB0
K4H280838B-TCA0
(DDR266A)
(DDR266B)
(DDR200)
Unit
typical
worst
typical
worst
typical
worst
Notes
IDD0
90
95
90
95
80
85
mA
IDD1
140
150
140
150
125
135
mA
IDD2P
21
25
21
25
19
23
mA
IDD2F
40
45
40
45
35
40
mA
IDD2Q
30
35
30
35
27
32
mA
IDD3P
25
30
25
30
20
25
mA
IDD3N
40
45
40
45
30
35
mA
IDD4R
150
165
150
165
125
140
mA
IDD4W
135
150
135
150
105
120
mA
IDD5
195
205
195
205
180
190
mA
IDD6
Normal
2
2
2
2
2
2
mA
Low power
1
1
1
1
1
1
mA
Optional
IDD7
260
280
260
280
250
275
mA
- 41 -
REV. 1.0 November. 2. 2000