K4H280438B-TCA0 Datasheet, PDF (36/53 Pages) Samsung semiconductor – 128Mb DDR SDRAM

128Mb DDR SDRAM
Current State CS RAS CAS WE
Address
Command
PRECHARG- L H H L X
ING
(DURING tRP)
L
H
L
X BA, CA, A10
L L H H BA, RA
Burst Stop
READ/WRITE
Active
L L H L BA, A10
PRE/PREA
L L L HX
Refresh
L L L L Op-Code, Mode-Add MRS
ROW
L H H LX
ACTIVATING _L
H
L
X BA, CA, A10
(FROM ROW
L L H H BA, RA
ACTIVE TO
tRCD)
L L H L BA, A10
L L L HX
Burst Stop
READ/WRITE
Active
PRE/PREA
Refresh
L L L L Op-Code, Mode-Add MRS
WRITE
L H H LX
RECOVERING _L
H
L
H BA, CA, A10
(DURING tWR
L H L L BA, CA, A10
OR tCDLR)
L L H H BA, RA
Burst Stop
READ
WRITE
Active
L
L
H
L BA, A10
PRE/PREA
L L L HX
Refresh
L L L L Op-Code, Mode-Add MRS
Table 9-3. Functional truth table
Action
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
NOP*4(Idle after tRP)
ILLEGAL
ILLEGAL
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
ILLEGAL*2
ILLEGAL
ILLEGAL
ILLEGAL*2
ILLEGAL*2
WRITE
ILLEGAL*2
ILLEGAL*2
ILLEGAL
ILLEGAL
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REV. 1.0 November. 2. 2000