 English |
|
|
|
|
|
|
|
| K4T1G164QE-HCE7000 Datasheet, PDF (40/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) | |||
| |||
| ◁ |
K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.12
DDR2 SDRAM
CK
CK
VDDQ
VIH(AC)min
tIS
tIH
VIH(DC)min
dc to VREF
region
VREF(DC)
VIL(DC)max
dc to VREF
region
tangent
line
VIL(AC)max
tIS tIH
nominal
line
tangent
line
nominal
line
VSS
âTR
âTF
Hold Slew Rate
Rising Signal
=
tangent line [ VREF(DC) - VIL(DC)max ]
âTR
Hold Slew Rate
Falling Signal
=
tangent line [ VIH(DC)min - VREF(DC)]
âTF
Figure 18. IIIustration of tangent line for tIH
- 40 -
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese