K4T1G164QE-HCE7000 Datasheet, PDF (20/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant)

K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
12. Input/Output capacitance
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
DDR2-667
Min
Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
3.5
x
0.5
Rev. 1.12
DDR2 SDRAM
DDR2-800
Min
Max
1.0
2.0
x
0.25
1.0
1.75
x
0.25
2.5
3.5
x
0.5
Units
pF
pF
pF
pF
pF
pF
13. Electrical Characteristics & AC Timing for DDR2-800/667
(0 °C < T_OPER < 95 °C; V_DDQ = 1.8V + 0.1V; V_DD = 1.8V + 0.1V)
13.1 Refresh Parameters by Device Density
Parameter
Refresh to active/Refresh command time
Average periodic refresh interval
tRFC
tREFI
Symbol
0 °C ≤ T_CASE ≤ 85°C
85 °C < T_CASE ≤ 95°C
256Mb 512Mb 1Gb
2Gb
4Gb
Units
75
105
127.5
195
327.5
ns
7.8
7.8
7.8
7.8
7.8
µs
3.9
3.9
3.9
3.9
3.9
µs
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
tRCD
tRP
tRC
tRAS
DDR2-800(E7)
5-5-5
min
max
5
8
3.75
8
2.5
8
-
-
12.5
-
12.5
-
57.5
-
45
70000
DDR2-800(F7)
6-6-6
min
max
-
-
3.75
8
3
8
2.5
8
15
-
15
-
60
-
45
70000
DDR2-667(E6)
5-5-5
min
max
5
8
3.75
8
3
8
-
-
15
-
15
-
60
-
45
70000
Units
ns
ns
ns
ns
ns
ns
ns
ns
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