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| K4T1G164QE-HCE7000 Datasheet, PDF (33/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) | |||
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K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.12
DDR2 SDRAM
DQS
DQS
VDDQ
tDS tDH
VIH(AC)min
VIH(DC)min
VREF(DC)
dc to VREF
region
VIL(DC)max
dc to VREF
region
tangent
line
VIL(AC)max
tDS tDH
nominal
line
tangent
line
nominal
line
VSS
âTR
âTF
HRoisldinSgleSwignRaalte=
tangent line [ VREF(DC) - VIL(DC)max ]
âTR
HFoalldlinSgleSwigRnaalte=
tangent line [ VIH(DC)min - VREF(DC) ]
âTF
Figure 13. IIIustration of tangent line for tDH (differential DQS, DQS)
- 33 -
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