K4T1G164QE-HCE7000 Datasheet, PDF (25/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant)

K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.12
DDR2 SDRAM
15. Specific Notes for dedicated AC parameters
1. User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active power down exit timing.
tXARDS is expected to be used for slow active power down exit timing.
2. AL = Additive Latency.
3. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min) have been satisfied.
4. A minimum of two clocks (2 x tCK or 2 x nCK) is required irrespective of operating frequency.
5. Timings are specified with command/address input slew rate of 1.0 V/ns.
6. Timings are specified with DQs, DM, and DQS’s (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns.
7. Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in
differential strobe mode and a slew rate of 1.0 V/ns in single ended mode.
8. Data setup and hold time derating.
[ Table 1 ] DDR2-400/533 tDS/tDH derating with differential data strobe
∆tDS, ∆tDH Derating Values of DDR2-400, DDR2-533 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH
2.0 125 45 125 45 125 45
-
-
-
-
-
-
-
-
-
-
-
-
1.5 83 21 83 21 83 21 95 33
-
-
-
-
-
-
-
-
-
-
1.0 0
0
0
0
0
0
12 12 24 24
-
-
-
-
-
-
-
-
DQ _{0.9 -}
- -11 -14 -11 -14 1
-2 13 10 25 22
-
-
-
-
-
-
Siew
rate
0.8
-
-
-
- -25 -31 -13 -19 -1
-7 11
5
23 17
-
-
-
-
V/ns ^{0.7 -}
-
-
-
-
- -31 -42 -19 -30 -7 -18 5
-6 17
6
-
-
0.6 -
-
-
-
-
-
-
- -43 -59 -31 -47 -19 -35 -7 -23 5 -11
0.5 -
-
-
-
-
-
-
-
-
- -74 -89 -62 -77 -50 -65 -38 -53
0.4 -
-
-
-
-
-
-
-
-
-
-
- -127 -140 -115 -128 -103 -116
[ Table 2 ] DDR2-667/800 tDS/tDH derating with differential data strobe
∆tDS, ∆tDH Derating Values for DDR2-667, DDR2-800 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH
2.0 100 45 100 45 100 45
-
-
-
-
-
-
-
-
-
-
-
-
1.5 67 21 67 21 67 21 79 33
-
-
-
-
-
-
-
-
-
-
1.0 0
0
0
0
0
0
12 12 24 24
-
-
-
-
-
-
-
-
DQ 0.9 -
-
-5 -14 -5 -14 7
-2 19 10 31 22
-
-
-
-
-
-
Slew
rate
0.8
-
-
-
- -13 -31 -1 -19 11 -7 23
5
35 17
-
-
-
-
V/ns ^{0.7 -}
-
-
-
-
- -10 -42 2 -30 14 -18 26 -6 38 6
-
-
0.6 -
-
-
-
-
-
-
- -10 -59 2 -47 14 -35 26 -23 38 -11
0.5 -
-
-
-
-
-
-
-
-
- -24 -89 -12 -77 0 -65 12 -53
0.4 -
-
-
-
-
-
-
-
-
-
-
- -52 -140 -40 -128 -28 -116
- 25 -