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| K4T1G044QE Datasheet, PDF (40/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM | |||
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K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
CK
CK
VDDQ
VIH(AC)min
tIS
tIH
VIH(DC)min
dc to VREF
region
VREF(DC)
VIL(DC)max
dc to VREF
region
tangent
line
VIL(AC)max
tIS tIH
nominal
line
tangent
line
nominal
line
VSS
ÎTR
ÎTF
Hold Slew Rate
Rising Signal
=
tangent line [ VREF(DC) - VIL(DC)max ]
ÎTR
Hold Slew Rate
Falling Signal
=
tangent line [ VIH(DC)min - VREF(DC)]
ÎTF
Figure 18. IIIustration of tangent line for tIH
- 40 -
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