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| K4T1G044QE Datasheet, PDF (32/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM | |||
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K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
DQS
Note1
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
VDDQ
tDS tDH
VIH(AC)min
VIH(DC)min
dc to VREF
region
VREF(DC)
dc to VREF
region
nominal
slew rate
VIL(DC)max
VIL(AC)max
tDS tDH
nominal
slew rate
VSS
ÎTR
ÎTF
Hold Slew Rate VREF(DC) - VIL(DC)max
Rising Signal =
ÎTR
Hold Slew Rate
Falling Signal
=
VIH(DC)min - VREF(DC)
ÎTF
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 12. IIIustration of nominal slew rate for tDH (single-ended DQS)
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