English
Language : 

K4T1G044QE Datasheet, PDF (37/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM
K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
CK
CK
VDDQ
tIS
tIH
VIH(AC)min
VREF to ac
region
VIH(DC)min
VREF(DC)
VIL(DC)max
nominal slew
rate
VIL(AC)max
tIS tIH
nominal
slew rate
VREF to ac
region
VSS
ΔTF
SFeatullpinSgleSwignRaalte=
VREF(DC) - VIL(AC)max
ΔTF
ΔTR
Setup Slew Rate VIH(AC)min - VREF(DC)
Rising Signal =
ΔTR
Figure 15. IIIustration of nominal slew rate for tIS
- 37 -