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| K4T1G044QE Datasheet, PDF (33/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM | |||
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K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
DQS
DQS
VDDQ
tDS tDH
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
dc to VREF
region
dc to VREF
region
tangent
line
VIL(AC)max
tDS tDH
nominal
line
tangent
line
nominal
line
VSS
ÎTR
ÎTF
HRoisldinSgleSwignRaalte=
tangent line [ VREF(DC) - VIL(DC)max ]
ÎTR
HFoalldlinSgleSwigRnaalte=
tangent line [ VIH(DC)min - VREF(DC) ]
ÎTF
Figure 13. IIIustration of tangent line for tDH (differential DQS, DQS)
- 33 -
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