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| K4T1G044QE Datasheet, PDF (39/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM | |||
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K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
CK
CK
VDDQ
VIH(AC)min
tIS
tIH
VIH(DC)min
dc to VREF
region
VREF(DC)
VIL(DC)max
dc to VREF
region
nominal
slew rate
tIS tIH
nominal
slew rate
VIL(AC)max
VSS
Hold Slew Rate
Rising Signal =
VREF(DC) - VIL(DC)max
ÎTR
ÎTR
ÎTF
Hold Slew Rate
Falling Signal
=
VIH(DC)min - VREF(DC)
ÎTF
Figure 17. IIIustration of nominal slew rate for tIH
- 39 -
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