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| K4T1G044QE Datasheet, PDF (38/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM | |||
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K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
DQS
DQS
VDDQ
tDS tDH
nominal
line
VIH(AC)min
VREF to ac
region
VIH(DC)min
tDS tDH
tangent
line
VREF(DC)
tangent
line
VIL(DC)max
VIL(AC)max
nominal
line
VSS
ÎTF
VREF to ac
region
ÎTR
SeRtiuspinSgleSwignRaalt=e
tangent
line[VIH(AC)min
ÎTR
-
VREF(DC)]
Setup Slew Rate
Falling Signal =
tangent line[VREF(DC) - VIL(AC)max]
ÎTF
Figure 16. IIIustration of tangent line for tIS
- 38 -
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