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| K4T1G044QE Datasheet, PDF (31/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM | |||
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K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
DQS
DQS
VDDQ
tDS tDH
VIH(AC)min
VIH(DC)min
dc to VREF
region
VREF(DC)
dc to VREF
region
nominal
slew rate
VIL(DC)max
VIL(AC)max
tDS tDH
nominal
slew rate
VSS
ÎTR
ÎTF
Hold Slew Rate
Rising Signal =
VREF(DC) - VIL(DC)max
ÎTR
Hold Slew Rate
Falling Signal =
VIH(DC)min - VREF(DC)
ÎTF
Figure 11. IIIustration of nominal slew rate for tDH (differential DQS, DQS)
- 31 -
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