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| K4T1G044QE Datasheet, PDF (28/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM | |||
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K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
DQS
Note1
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
VDDQ
tDS tDH
VIH(AC)min
VREF to ac
region
VIH(DC)min
VREF(DC)
VIL(DC)max
nominal slew
rate
VIL(AC)max
tDS tDH
nominal
slew rate
VREF to ac
region
VSS
ÎTF
Setup Slew Rate= VREF(DC) - VIL(AC)max
Falling Signal
ÎTF
ÎTR
Setup Slew Rate
Rising Signal =
VIH(AC)min - VREF(DC)
ÎTR
NOTE : DQS signal must be monotonic between VIL(AC)max and VIH(AC)min.
Figure 8. IIIustration of nominal slew rate for tDS (single-ended DQS)
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