K4T1G044QE Datasheet, PDF (22/46 Pages) Samsung semiconductor – 1Gb E-die DDR2 SDRAM

K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
Parameter
Symbol
Four Activate Window for 1KB page size products
Four Activate Window for 2KB page size products
CAS to CAS command delay
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any command
Exit active power down to read command
Exit active power down to read command
(slow exit, lower power)
CKE minimum pulse width (HIGH and LOW pulse width)
ODT turn-on delay
ODT turn-on
tFAW
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
tCKE
tAOND
tAON
ODT turn-on (Power-Down mode)
tAONPD
ODT turn-off delay
ODT turn-off
tAOFD
tAOF
ODT turn-off (Power-Down mode)
tAOFPD
ODT to power down entry latency
tANPD
ODT power down exit latency
tAXPD
OCD drive mode output delay
tOIT
Minimum time
drops LOW
clocks
remains
ON
after
CKE
asynchronously
tDelay
DDR2-800
min
max
35
x
45
x
2
x
15
x
WR + tnRP
x
7.5
x
7.5
x
tRFC + 10
x
200
x
2
x
2
x
DDR2-667
min
max
37.5
x
50
x
2
x
15
x
WR + tnRP
x
7.5
x
7.5
x
tRFC + 10
x
200
x
2
x
2
x
8 - AL
x
7 - AL
x
3
x
3
x
2
2
2
2
tAC(min) tAC(max)+0.7 tAC(min) tAC(max)+0.7
tAC(min)+2
2*tCK(avg)
+tAC(max)+1
tAC(min)+2
2*tCK(avg)
+tAC(max)+1
2.5
2.5
2.5
2.5
tAC(min) tAC(max)+0.6 tAC(min) tAC(max)+0.6
tAC(min)+2
2.5*tCK(avg)+
tAC(max)+1
tAC(min)+2
2.5*tCK(avg)+
tAC(max)+1
3
x
3
x
8
x
8
x
0
12
0
12
tIS+tCK(avg)
+tIH
x
tIS+tCK(avg)
+tIH
x
Units
ns
ns
nCK
ns
nCK
ns
ns
ns
nCK
nCK
nCK
nCK
nCK
nCK
ns
ns
nCK
ns
ns
nCK
nCK
ns
ns
NOTE
32
32
32
33
24,32
3,32
32
1
1,2
27
16
6,16,40
17,45
17,43,45
32
15
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