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| K4T56163QI Datasheet, PDF (36/42 Pages) Samsung semiconductor – 256Mb I-die DDR2 SDRAM Specification | |||
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K4T56163QI
DDR2 SDRAM
CK
CK
VDDQ
tIS
tIH
VIH(ac) min
VIH(dc) min
dc to VREF
region
VREF(dc)
VIL(dc) max
dc to VREF
region
tangent
line
VIL(ac) max
tIS tIH
nominal
line
tangent
line
nominal
line
VSS
âTR
âTF
Hold Slew Rate
Rising Signal
=
tangent line [ VREF(dc) - Vil(dc)max ]
âTR
Hold Slew Rate
Falling Signal
=
tangent line [ Vih(dc)min - VREF(dc) ]
âTF
Figure 16 - IIIustration of tangent line for tIH
36 of 42
Rev. 1.0 October 2007
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