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| K4T56163QI Datasheet, PDF (29/42 Pages) Samsung semiconductor – 256Mb I-die DDR2 SDRAM Specification | |||
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K4T56163QI
DDR2 SDRAM
DQS
DQS
VDDQ
tDS tDH
VIH(ac) min
VIH(dc) min
dc to VREF
region
VREF(dc)
VIL(dc) max
dc to VREF
region
tangent
line
VIL(ac) max
tDS tDH
nominal
line
tangent
line
nominal
line
VSS
âTR
âTF
HRoisldinSgleSwignRaalte=
tangent line [ VREF(dc) - Vil(dc)max ]
âTR
HFoalldlinSgleSwigRnaalte=
tangent line [ Vih(dc)min - VREF(dc) ]
âTF
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
29 of 42
Rev. 1.0 October 2007
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