K4T56163QI Datasheet, PDF (2/42 Pages) Samsung semiconductor – 256Mb I-die DDR2 SDRAM Specification

K4T56163QI
Table of Contents
DDR2 SDRAM
1.0 Ordering Information ....................................................................................................................4
2.0 Key Features .................................................................................................................................4
3.0 Package Pinout/Mechanical Dimension & Addressing .............................................................5
3.1 x16 package pinout (Top View) : 84ball FBGA Package .......................................................................5
3.2 FBGA Package Dimension(x16) .......................................................................................................6
4.0 Input/Output Functional Description ..........................................................................................7
5.0 DDR2 SDRAM Addressing ...........................................................................................................8
6.0 Absolute Maximum DC Ratings ...................................................................................................9
7.0 AC & DC Operating Conditions ...................................................................................................9
7.1 Recommended DC Operating Conditions (SSTL - 1.8) .........................................................................9
7.2 Operating Temperature Condition ..................................................................................................10
7.3 Input DC Logic Level ....................................................................................................................10
7.4 Input AC Logic Level ....................................................................................................................10
7.5 AC Input Test Conditions ..............................................................................................................10
7.6 Differential input AC logic Level .....................................................................................................11
7.7 Differential AC output parameters ..................................................................................................11
8.0 ODT DC electrical characteristics .............................................................................................11
9.0 OCD default characteristics ......................................................................................................12
10.0 IDD Specification Parameters and Test Conditions ..............................................................13
11.0 DDR2 SDRAM IDD Spec ...........................................................................................................15
12.0 Input/Output capacitance .........................................................................................................16
13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533/400 ......................................16
13.1 Refresh Parameters by Device Density ........................................................................................16
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin .............................................16
13.3 Timing Parameters by Speed Grade ............................................................................................17
14.0 General notes, which may apply for all AC parameters ........................................................19
15.0 Specific Notes for dedicated AC parameters ..........................................................................21
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Rev. 1.0 October 2007