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| K4T56163QI Datasheet, PDF (33/42 Pages) Samsung semiconductor – 256Mb I-die DDR2 SDRAM Specification | |||
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K4T56163QI
DDR2 SDRAM
CK
CK
VDDQ
tIS
tIH
VIH(ac) min
VREF to ac
region
VIH(dc) min
VREF(dc)
VIL(dc) max
nominal slew
rate
VIL(ac) max
tIS tIH
nominal
slew rate
VREF to ac
region
VSS
âTF
SFeatullpinSgleSwignRaalte=
VREF(dc) - Vil(ac)max
âTF
âTR
Setup Slew Rate Vih(ac)min - VREF(dc)
Rising Signal =
âTR
Figure 13 - IIIustration of nominal slew rate for tIS
33 of 42
Rev. 1.0 October 2007
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