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| K4T56163QI Datasheet, PDF (35/42 Pages) Samsung semiconductor – 256Mb I-die DDR2 SDRAM Specification | |||
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K4T56163QI
DDR2 SDRAM
CK
CK
VDDQ
tIS
tIH
VIH(ac) min
VIH(dc) min
dc to VREF
region
VREF(dc)
dc to VREF
region
nominal
slew rate
VIL(dc) max
VIL(ac) max
tIS tIH
nominal
slew rate
VSS
Hold Slew Rate VREF(dc) - Vil(dc)max
Rising Signal =
âTR
âTR
âTF
Hold Slew Rate
Falling Signal =
Vih(dc)min - VREF(dc)
âTF
Figure 15 - IIIustration of nominal slew rate for tIH
35 of 42
Rev. 1.0 October 2007
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