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K4T56163QI Datasheet, PDF (23/42 Pages) Samsung semiconductor – 256Mb I-die DDR2 SDRAM Specification
K4T56163QI
DDR2 SDRAM
DQS
DQS
VDDQ
tDS tDH
tDS tDH
VIH(ac) min
VREF to ac
region
VIH(dc) min
VREF(dc)
VIL(dc) max
nominal slew
rate
VIL(ac) max
VSS
tVAC
nominal
slew rate
VREF to ac
region
∆TF
Setup Slew Rate= VREF(dc) - Vil(ac)max
Falling Signal
∆TF
∆TR
Setup Slew Rate Vih(ac)min - VREF(dc)
Rising Signal =
∆TR
Figure 5 - IIIustration of nominal slew rate for tDS (differential DQS,DQS)
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Rev. 1.0 October 2007