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K4T56163QI Datasheet, PDF (34/42 Pages) Samsung semiconductor – 256Mb I-die DDR2 SDRAM Specification | |||
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K4T56163QI
DDR2 SDRAM
CK
CK
VDDQ
VIH(ac) min
VIH(dc) min
VREF to ac
region
VREF(dc)
tIS
tIH
nominal
line
tangent
line
tIS tIH
tangent
line
VIL(dc) max
VIL(ac) max
nominal
line
VSS
âTF
VREF to ac
region
âTR
Setup Slew Rate= tangent line[Vih(ac)min - VREF(dc)]
Rising Signal
âTR
SFetaullpinSgleSwignRaalte=
tangent line[VREF(dc) - Vil(ac)max]
âTF
Figure 14 - IIIustration of tangent line for tIS
34 of 42
Rev. 1.0 October 2007
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