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| K4T56163QI Datasheet, PDF (25/42 Pages) Samsung semiconductor – 256Mb I-die DDR2 SDRAM Specification | |||
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K4T56163QI
DDR2 SDRAM
DQS
DQS
VDDQ
tDS tDH
nominal
line
VIH(ac) min
VIH(dc) min
VREF to ac
region
VREF(dc)
tangent
line
tDS tDH
tangent
line
VIL(dc) max
VIL(ac) max
nominal
line
VSS
âTF
VREF to ac
region
âTR
Setup Slew Rate tangent line[Vih(ac)min - VREF(dc)]
Rising Signal=
âTR
Setup Slew Rate
Falling Signal =
tangent line[VREF(dc) - Vil(ac)max]
âTF
Figure 7 - IIIustration of tangent line for tDS (differential DQS, DQS)
25 of 42
Rev. 1.0 October 2007
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