K4T56163QI Datasheet, PDF (27/42 Pages) Samsung semiconductor – 256Mb I-die DDR2 SDRAM Specification

K4T56163QI
DDR2 SDRAM
DQS
DQS
V_DDQ
tDS tDH
V_IH(ac) min
V_IH(dc) min
dc to V_REF
region
V_REF(dc)
dc to V_REF
region
nominal
slew rate
V_IL(dc) max
V_IL(ac) max
tDS tDH
nominal
slew rate
V_SS
Hold Slew Rate ^VREF(dc) ^{- Vil(dc)max}
Rising Signal ⁼
∆TR
∆TR
∆TF
Hold Slew Rate
Falling Signal ⁼
Vih(dc)min - V_REF(dc)
∆TF
Figure 9 - IIIustration of nominal slew rate for tDH (differential DQS, DQS)
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Rev. 1.0 October 2007