K4S641632C Datasheet, PDF (34/42 Pages) Samsung semiconductor – 1M x 16Bit x 4 Banks Synchronous DRAM

K4S641632C
Read & Write Cycle with Auto Precharge II @Burst Length=4
CMOS SDRAM
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
HIGH
CS
RAS
CAS
ADDR
Ra
Ca
Rb
Cb
BA0
BA1
A10/AP
Ra
DQ CL=2
Rb
Qa0 Qa1 Qa2 Qa3
Qb0 Qb1 Qb2 Qb3
CL=3
Qa0 Qa1 Qa2 Qa3
Qb0 Qb1 Qb2 Qb3
WE
DQM
Row Active
(A-Bank)
Read with
Auto Precharge
(A-Bank)
*¨ç
Auto Precharge
Start Point
(A-Bank)
Row Active
(B-Bank)
Read with
Auto Precharge
(B-Bank)
*Note : *¨ç Any command to A-bank is not allowed in this period.
tRP is determined from at auto precharge start point
Auto Precharge
Start Point
(B-Bank)
: Don't care
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