K4S641632C Datasheet, PDF (10/42 Pages) Samsung semiconductor – 1M x 16Bit x 4 Banks Synchronous DRAM

K4S641632C
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address BA0 ~ BA1 A11 ~ A10/AP A9
Function RFU
RFU
W.B.L
A8
A7
TM
A6
A5
A4
CAS Latency
CMOS SDRAM
A3
A2
A1
A0
BT
Burst Length
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6 A5 A4 Latency A3
Type
A2 A1 A0 BT = 0 BT = 1
0
0
Mode Register Set
0
0
0 Reserved 0 Sequential 0 0 0
1
1
0
1
Reserved
0
0
1 Reserved 1 Interleave 0 0 1
2
2
1
0
Reserved
0
1
0
2
01 0
4
4
1
1
Reserved
0
1
1
3
01 1
8
8
Write Burst Length
1
0
0 Reserved
1 0 0 Reserved Reserved
A9
Length
0
Burst
1
0
1 Reserved
1
1
0 Reserved
1 0 1 Reserved Reserved
1 1 0 Reserved Reserved
1
Single Bit
1
1
1 Reserved
1 1 1 Full Page Reserved
Full Page Length : x4 (1024), x8 (512), x16 (256)
POWER UP SEQUENCE
1. Apply power and start clock, Attempt to maintain CKE= "H", DQM= "H" and the other pins are NOP condition at the inputs.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
cf.) Sequence of 4 & 5 is regardless of the order.
The device is now ready for normal operation.
Note : 1. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
2. RFU (Reserved for future use) should stay "0" during MRS cycle.
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