K4S640832N Datasheet, PDF (3/15 Pages) Samsung semiconductor – Consumer Memory

Product Guide
Apr. 2010
Consumer Memory
12 3
4
5
6 78
9 10 11
K4 XXXXXXXX-XXXX
SAMSUNG Memory
DRAM
Product
Density & Refresh
Organization
Speed
Temperature & Power
Package Type
Revision
Interface (VDD, VDDQ)
Bank
11. Speed
75 : 7.5ns, PC133 (133MHz CL=3)
60 : 6.0ns (166MHz CL=3)
50 : 5.0ns (200MHz CL=3)
40 : 4.0ns (250MHz CL=3)
B0 : DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)
B3 : DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)
CC : DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
E6 : DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5)
E7 : DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)
F7 : DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6)
F8 : DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)
H9 : DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)
K0 : DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)
7A : GDDR3-2.6Gbps (0.77ns)
08 : GDDR3-2.4Gbps (0.8ns)
1A : GDDR3-2.0Gbps (1.0ns)
12 : GDDR3-1.6Gbps (1.25ns)
14 : GDDR3-1.4Gbps (1.4ns)
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