K4R761869A-F Datasheet, PDF (3/20 Pages) Samsung semiconductor – 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

K4R761869A
Direct RDRAM^™
Overview
The RDRAM^ device is a general purpose high-perfor-
mance memory device suitable for use in a broad range of
applications including computer memory, graphics, video,
and any other application where high bandwidth and low
latency are required.
The 576Mbit RDRAM devices are extremely high-speed
CMOS DRAMs organized as 32M words by 18 bits. The use
of Rambus Signaling Level (RSL) technology permits up to
1200 MHz transfer rates while using conventional system
and board design technologies. RDRAM devices are capable
of sustained data transfers up to 0.833ns per two bytes (6.7ns
per sixteen bytes).
The architecture of RDRAM devices allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The RDRAM device's 32 banks
support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
♦ Highest sustained bandwidth per DRAM device
- 2.4GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
♦ Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
♦ Advanced power management:
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
♦ Organization: 2kbyte pages and 32 banks, x18
- x18 organization allows ECC configurations or
increased storage/bandwidth
SAMSUNG 320
K4R761869A- xCxx
Figure 1: Direct RDRAM CSP Package
The 576Mbit RDRAM devices are offered in a CSP hori-
zontal package suitable for desktop as well as low-profile
add-in card and mobile applications.
Key Timing Parameters/Part Numbers
Speed
Organization
Bin
I/O
Freq.
MHz
t_RAC
(Row
Access
Time) ns
Part Number
1Mx18x32s^a
-CN1 1200
-CT9 1066
32
K4R761869A-F^bC^cN1
32P
K4R761869A-FCT9
-CM8 800
40
K4R761869A-FCM8
-CN1 1200
32
K4R761869A-GCN1
1Mx18x32s
-CT9 1066
32P
K4R761869A-GCT9
-CM8 800
40
K4R761869A-GCM8
a. “32s” - 32 banks which use a “split” bank architecture.
b. “F” - WBGA package, “G”- WBGA lead free package.
c. “C” - RDRAM core uses normal power self refresh.
♦ Uses Rambus Signaling Level (RSL) for up to 1200MHz
operation
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Version 1.41 Jan. 2004