K4R761869A-F Datasheet, PDF (18/20 Pages) Samsung semiconductor – 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

K4R761869A
Direct RDRAM^™
Absolute Maximum Ratings
Table 14: Absolute Maximum Ratings
Symbol
Parameter
V_I,ABS
V_DD,ABS, V_DDA,ABS
T_STORE
T_MIN
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
Minimum operation temperature
Note*) Component : refer to T_J,Θ_JC Module : refre to T_{PLATE, MAX}
Min
- 0.3
- 0.5
- 50
0
Max
V_DD+0.3
V_DD+1.0
100
Note*
Unit
V
V
°C
°C
I_DD - Supply Current Profile
Table 15: Supply Current Profile
I_DD value
Max
Max
Max
RDRAM Power State and Steady-State Transaction Rates^a Min (1200MHz (1066MHz (800MHz, Unit
, -32)
, -32P)
-40)
I_DD,PDN
I_DD,NAP
I_DD,STBY
Device in PDN, self-refresh enabled and INIT.LSR=0.
-
Device in NAP.
-
Device in STBY. This is the average for a device in STBY with (1) no
packets on the Channel, and (2) with packets sent to other devices.
-
I_DD,REFRESH Device in STBY and refreshing rows at the t_REF,MAX period.
-
I_DD,ATTN
Device in ATTN. This is the average for a device in ATTN with (1) no
packets on the Channel, and (2) with packets sent to other devices.
-
Device in ATTN. ACT command every 8•t_CYCLE, PRE command
I_DD,ATTN-W every 8•t_CYCLE, WR command every 4•t_CYCLE, and data is
-
1100..1100
Device in ATTN. ACT command every 8•t_CYCLE, PRE command
I_DD,ATTN-R
every 8•t_CYCLE, RD command every 4•t_CYCLE, and data is
-
1111..1111^c
9000
4
110
110
165
980(x18)^b
960(x18)
9000
4
110
110
160
930(x18)
900(x18)
9000
µA
4
mA
95
mA
95
mA
135
mA
730(x18) mA
720(x18) mA
a. CMOS interface consumes power in all power states.
b. x18 RDRAM device data width.
c. This does not include the I_OL sink current. The RDRAM device dissipates I_OL•V_OL in each output driver when a logic one is driven.
Table 16: Supply Current at Initialization
Symbol
I_DD,PWRUP,D
I_DD,SETR,D
Parameter
I_DD from power -on to SETR
I_DD from SETR to CLRR
Allowed Range of t_CYCLE
1.667ns to 2.5ns
1.667ns to 2.5ns
a. The supply current will be 150mA when tCYCLE is in the range 15ns to 1000ns.
V_DD
V_DD,MIN
V_DD,MIN
Min
-
-
Max
200^a
332
Unit
mA
mA
Page 16
Version 1.41 Jan. 2004