K4R761869A-F Datasheet, PDF (19/20 Pages) Samsung semiconductor – 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

K4R761869A
Direct RDRAM^™
Capacitance and Inductance
Symbol
L_I
L₁₂
∆L_I
C_I
C₁₂
∆C_I
R_I
Table 17: RSL Pin Parasitics
Parameter and Conditions - RSL pins
Min
RSL effective input inductance @ t_CYCLE=1.667ns
-
RSL effective input inductance @ t_CYCLE=1.875ns
-
RSL effective input inductance @ t_CYCLE=2.5ns
-
Mutual inductance between any DQA or DQB RSL signals.
-
Mutual inductance between any ROW or COL RSL signals.
-
Difference in L_I value between any RSL pins of a single device.
-
RSL effective input capacitance^a @ t_CYCLE=1.667ns
2.0
RSL effective input capacitance^a @ t_CYCLE=1.875ns
2.0
RSL effective input capacitance^a @ t_CYCLE=2.5ns
2.0
Mutual capacitance between any RSL signals.
-
Difference in C_I value between average of {CTM, CTMN,
CFM, CFMN} and any RSL pins of a single device.
-
RSL effective input resistance @ t_CYCLE=1.667ns
4
RSL effective input resistance @ t_CYCLE=1.875ns
4
RSL effective input resistance @ t_CYCLE=2.5ns
4
a. This value is a combination of the device IO circuitry and package capacitances
Table 18: CMOS Pin Parasitics
Symbol
Parameter and Conditions - CMOS pins
Min
L_{I ,CMOS}
CMOS effective input inductance
-
C_{I ,CMOS}
CMOS effective input capacitance (SCK,CMD)^a
1.7
C_{I ,CMOS,SIO}
CMOS effective input capacitance (SIO1, SIO0)^a
-
a. This value is a combination of the device IO circuitry and package capacitances.
Max
3.5
3.5
4.0
0.2
0.6
1.8
2.3
2.3
2.4
0.1
0.06
10
10
15
Max
8.0
2.1
7.0
Unit
Figure
nH
Figure 63
nH
Figure 63
nH
nH
Figure 63
pF
Figure 63
pF
Figure 63
pF
Figure 63
Ω
Figure 63
Unit
Figure
nH
pF
Figure 63
pF
Page 17
Version 1.41 Jan. 2004