DS_K9K1208U0A Datasheet, PDF (23/27 Pages) Samsung semiconductor – 64M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0, K9K1208U0A-YIB0
FLASH MEMORY
COPY-BACK PROGRAM
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the array to another page within
the same array without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back is a sequential execu-
tion of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read operation
with "00h" command with the address of the source page moves the whole 528byte data into the internal buffer. As soon as the Flash
returns to Ready state, copy-back programming command "8Ah" may be given with three address cycles of target page followed.
The data stored in the internal buffer is then programmed directly into the memory cells of the destination page. Once the Copy-Back
Program is finished, any additional partial page programming into the copied pages is prohibited before erase. Since the memory
array is internally partitioned into four different planes, copy-back program is allowed only within the same memory plane. Thus, A14
and A25, the plane address, of source and destination page address must be the same.
Figure 8. Copy-Back Program Operation
tR
R/B
tPROG
I/O0~7
00h
Add.(4Cycles)
A0 ~ A7 & A9 ~ A25
Source Address
8Ah Add.(4Cycles)
A0 ~ A7 & A9 ~ A25
Destination Address
70h
I/O0
Fail
Pass
BLOCK ERASE
The Erase operation is done on a block(16K Byte) basis. Block address loading is accomplished in two cycles initiated by an Erase
Setup command(60h). Only address A14 to A25 is valid while A9 to A13 is ignored. The Erase Confirm command(D0h) following the
block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command
ensures that memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 8 details the sequence.
Figure 9. Block Erase Operation
R/B
tBERS
I/O0~7
60h
Address Input(3Cycle)
D0h
70h
Block Add. : A9 ~ A25
I/O0
Pass
Fail
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