DS_K9K1208U0A Datasheet, PDF (15/27 Pages) Samsung semiconductor – 64M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0, K9K1208U0A-YIB0
* Input Data Latch Cycle
CLE
FLASH MEMORY
tCLH
tCH
CE
ALE
tALS
tWC
WE
I/O0~7
tWP
tWH
tDS ^tDH
DIN 0
tWP
tDS ^tDH
DIN 1
tWP
tDS ^tDH
DIN 511
* Sequential Out Cycle after Read(CLE=L, WE=H, ALE=L)
CE
RE
I/O0~7
R/B
tRC
tREA
tREH
tREA
Dout
tRR
tRHZ
Dout
tREA
tCHZ*
tRHZ*
Dout
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
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