DS_K9K1208U0A Datasheet, PDF (22/27 Pages) Samsung semiconductor – 64M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0, K9K1208U0A-YIB0
Figure 6. Sequential Row Read2 Operation
tR
tR
R/B
FLASH MEMORY
tR
I/O0~7
50h
Start Add.(4Cycle)
A0 ~ A3 & A9 ~ A25
(A4 ~ A7 :
Don′t Care)
Data Output
1st
Data Output
2nd
(16Byte)
Data Output
Nth
(16Byte)
1st
Block
Nth
Data Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive
bytes up to 528, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 2 for main array and 3 for spare array. The addressing may be done in
any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be
loaded into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropri-
ate cell. Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the
attached technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address input and
then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm com-
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-
gramming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify,
thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be
entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle by
monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are
valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 7).
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in
Read Status command mode until another valid command is written to the command register.
Figure 7. Program & Read Status Operation
R/B
tPROG
I/O0~7
80h
Address & Data Input
10h
70h
A0 ~ A7 & A9 ~ A25
528 Byte Data
I/O0
Pass
Fail
22