DS_K9K1208U0A Datasheet, PDF (19/27 Pages) Samsung semiconductor – 64M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0, K9K1208U0A-YIB0
BLOCK ERASE OPERATION(ERASE ONE BLOCK)
FLASH MEMORY
CLE
CE
tWC
WE
ALE
tWB
tBERS
RE
I/O0~7
R/B
60h A9 ~ A16 A17 ~ A24 A25
Page(Row)
Address
DOh
Auto Block Erase Setup Command
Erase Command
Busy
MANUFACTURE & DEVICE ID READ OPERATION
70h
I/O 0
I/O0=0 Successful Erase
Read Status I/O0=1 Error in Erase
Command
CLE
CE
WE
ALE
RE
I/O 0 ~ 7
90h
Read ID Command
00h
Address. 1cycle
tREADID
ECh
Maker Code
76h
Device Code
19