S124 Datasheet, PDF (86/98 Pages) Renesas Technology Corp – 32-bit ARM Cortex-M0+ microcontroller

S124
2. Electrical Characteristics
Table 2.58 Code flash characteristics (3)
Middle-speed operating mode
Conditions: VCC = AVCC0 = 1.8 to 5.5 V, Ta = -40 to +85°C
Item
ICLK = 1 MHz
ICLK = 8 MHz
Symbol Min
Typ
Max
Min
Typ
Max
Unit
Programming time
4-byte
t_P4
-
Erasure time
1-KB
t_E1K
-
Blank check time
2-byte
t_BC4
-
1-KB
t_BC1K
-
Erase suspended time
t_SED
-
Startup area switching setting time
t_SAS
-
Access window time
t_AWS
-
OCD/serial programmer ID setting time t_OSIS
-
Flash memory mode transition wait
t_DIS
2
time 1
157
9.10
-
-
-
22.8
22.8
22.8
-
1411
-
289
-
87.7
-
1930
-
32.7
-
592
-
592
-
592
-
-
2
101
966
μs
6.10
228
ms
-
52.5
μs
-
414
μs
-
21.6
μs
14.2
465
ms
14.2
465
ms
14.2
465
ms
-
-
μs
Flash memory mode transition wait
t_MS
720
-
-
720
-
-
ns
time 2
Note 1. Does not include the time until each operation of the flash memory is started after instructions are executed by
the software.
Note 2. The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK
at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz
cannot be set.
Note 3. The frequency accuracy of ICLK must be ±3.5% while programming or erasing the flash memory. Confirm the
frequency accuracy of the clock source.
2.12.2 Data Flash Memory Characteristics
Table 2.59 Data flash characteristics (1)
Item
Reprogramming/erasure cycle*¹
Data hold time
After 10000 times of N_DPEC
After 100000 times of N_DPEC
After 1000000 times of N_DPEC
Symbol
N_DPEC
t_DDRP
Min
100000
20*^2, *³
5*^2, *³
-
Typ
1000000
-
-
1*^2, *³
Max
-
-
-
-
Unit
Times
Year
Year
Year
Conditions
-
Ta = +85°C
Ta = +25°C
Note 1. The reprogram/erase cycle is the number of erasure for each block. When the reprogram/erase cycle is n times
(n = 100,000), erasing can be performed n times for each block. For instance, when 1-byte programming is
performed 1,000 times for different addresses in 1-byte blocks, and then the entire block is erased, the
reprogram/erase cycle is counted as one. However, programming the same address for several times as one
erasure is not enabled. (overwriting is prohibited.)
Note 2. Characteristics when using the flash memory programmer and the self-programming library provided by Renesas
Electronics.
Note 3. These results are obtained from reliability testing.
R01DS0264EU0100 Rev.1.00
Feb 23, 2016
Page 86 of 95