R1EV58256BXXN Datasheet, PDF (7/25 Pages) Renesas Technology Corp – 256K EEPROM (32-Kword × 8-bit)

R1EV58256BxxN Series/R1EV58256BxxR Series
AC Characteristics
Test Conditions
(Ta = –40 to +85C, V_CC = 2.7 to 5.5 V)
 Input pulse levels: 0.4 V to 2.4 V (V_CC  3.6V), 0.4V to 3.0 V (V_CC  3.6 V), 0 V to V_CC (RES pin*²)
 Input rise and fall time:  5 ns
 Input timing reference levels: 0.8, 1.8 V
 Output load: 1TTL Gate +100 pF
 Output reference levels: 1.5 V, 1.5 V
Read Cycle
Parameter
Symbol
Min
Address to output delay
CE to output delay
OE to output delay
t_ACC

t_CE

t_OE
10
Address to output hold
t_OH
0
OE (CE) high to output float*¹
t_DF
0
RES low to output float*^{1, 2}
t_DFR
0
RES to output delay*²
t_RR
0
Max
120
120
60

40
350
600
Unit
ns
ns
ns
ns
ns
ns
ns
Test conditions
CE = OE = V_IL, WE = V_IH
OE = V_IL, WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
R10DS0208EJ0200 Rev.2.00
May 12, 2016
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