R1EV58256BXXN Datasheet, PDF (5/25 Pages) Renesas Technology Corp – 256K EEPROM (32-Kword × 8-bit)

R1EV58256BxxN Series/R1EV58256BxxR Series
DC Characteristics
Parameter
Input leakage current
Output leakage current
Standby V_CC current
Operating V_CC current
Symbol
Min
Typ
Max
I_LI


2*¹
I_LO


2
I_CC1


20
I_CC2


1
I_CC3


8


12


12


30
Output low voltage
V_OL


0.4
Output high voltage
V_OH
V_CC  0.8


Note: 1. I_LI on RES = 100 A max (only the R1EV58256BXXR series)
Capacitance
Parameter
Input capacitance*¹
Output capacitance*¹
Symbol
Min
Typ
Cin


Cout


Note: 1. This parameter is periodically sampled and not 100 tested.
(Ta = –40 to +85C, V_CC = 2.7 to 5.5 V)
Unit
Test conditions
A V_CC = 5.5 V, Vin = 5.5 V
A V_CC = 5.5 V, Vout = 5.5/0.4 V
A CE = V_CC
mA CE = V_IH
mA Iout = 0 mA, Duty = 100,
Cycle = 1 s, V_CC = 3.6 V
mA Iout = 0 mA, Duty = 100,
Cycle = 1 ns, V_CC = 5.5 V
mA Iout = 0 mA, Duty = 100,
Cycle = 120 s, V_CC = 3.6 V
mA Iout = 0 mA, Duty = 100,
Cycle = 120 ns, V_CC = 5.5 V
V I_OL = 2.1 mA
V I_OH = 400 A
(Ta = +25°C, f = 1 MHz)
Max Unit
Test conditions
6
pF Vin = 0 V
12
pF Vout = 0 V
AC Characteristics
Test Conditions
 Input pulse levels: 0.4 V to 3.0 V, 0 V to V_CC (RES pin*²)
 Input rise and fall time:  5 ns
 Input timing reference levels: 0.8, 2.0 V
 Output load: 1TTL Gate +100 pF
 Output reference levels: 1.5 V, 1.5 V
Read Cycle
Parameter
Address to output delay
CE to output delay
OE to output delay
Address to output hold
OE (CE) high to output float*¹
RES low to output float*^{1, 2}
RES to output delay*²
Symbol
t_ACC
t_CE
t_OE
t_OH
t_DF
t_DFR
t_RR
Min


10
0
0
0
0
Max
85
85
40

40
350
450
(Ta = –40 to +85C, V_CC = 4.5V to 5.5V)
Unit
ns
ns
ns
ns
ns
ns
ns
Test conditions
CE = OE = V_IL,WE = V_IH
OE = V_IL, WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL,WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL,WE = V_IH
CE = OE = V_IL,WE = V_IH
R10DS0208EJ0200 Rev.2.00
May 12, 2016
Page 5 of 23