R1EV58256BXXN Datasheet, PDF (1/25 Pages) Renesas Technology Corp – 256K EEPROM (32-Kword × 8-bit)

R1EV58256BxxN Series
R1EV58256BxxR Series
256K EEPROM (32-Kword × 8-bit)
Ready/Busy and RES function (R1EV58256BxxR)
Data Sheet
R10DS0208EJ0200
Rev.2.00
May 12, 2016
Description
Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable
EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high
reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They
also have a 64-byte page programming function to make their write operations faster.
Features
 Single supply: 2.7 to 5.5 V
 Access time:
 85 ns (max)/100 ns (max) at 4.5 V  V_CC < 5.5 V
 120 ns (max) at 2.7 V  V_CC  5.5 V
 Power dissipation:
 Active: 20 mW/MHz (typ)
 Standby: 110 W (max)
 On-chip latches: address, data, CE, OE, WE
 Automatic byte write: 10 ms (max)
 Automatic page write (64 bytes): 10 ms (max)
 Ready/Busy (only the R1EV58256BxxR series)
 Data polling and Toggle bit
 Data protection circuit on power on/off
 Conforms to JEDEC byte-wide standard
 Reliable CMOS with MONOS cell technology
 10⁵ or more erase/write cycles
 10 or more years data retention
 Software data protection
 Write protection by RES pin (only the R1EV58256BxxR series)
 Temperature range: 40 to 85C
 There are lead free products.
R10DS0208EJ0200 Rev.2.00
May 12, 2016
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