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| R1EV58256BXXN Datasheet, PDF (4/25 Pages) Renesas Technology Corp – 256K EEPROM (32-Kword × 8-bit) | |||
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R1EV58256BxxN Series/R1EV58256BxxR Series
Operation Table
Operation
CE
OE
WE
RES*3
Read
Standby
VIL
VIL
VIH
VH*1
VIH
ï´*2
ï´
ï´
Write
VIL
VIH
VIL
VH
Deselect
VIL
VIH
VIH
VH
Write inhibit
ï´
ï´
VIH
ï´
Data polling
ï´
VIL
ï´
ï´
VIL
VIL
VIH
VH
Program reset
ï´
ï´
ï´
VIL
Notes: 1. Refer to the recommended DC operating condition.
2. ï´: Donât care
3. This function is supported by only the R1EV58256BxxR series.
RDY/Busy*3
High-Z
High-Z
High-Z to VOL
High-Z
ï¾
ï¾
VOL
High-Z
I/O
Dout
High-Z
Din
High-Z
ï¾ï
ï¾
Data out (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
Input voltage relative to VSS
Operating temperature range*2
VCC
ï0.6 to +7.0
V
Vin
ï0.5*1 to +7.0*3
V
Topr
â40 to +85
ï°C
Storage temperature range
Tstg
ï55 to +125
ï°C
Notes: 1. Vin min = ï3.0 V for pulse width ï£ 50 ns
2. Including electrical characteristics and data retention
3. Should not exceed VCC + 1.0 V.
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
VCC
2.7
3.0
Input voltage*5
VSS
0
0
VIL
ï0.3*1
ï¾
VIH
1.9*2
ï¾
VH*4
VCC ï0.5
ï¾
Operating temperature
Topr
ïï´ï°
ï¾
Notes: 1. VIL min: ï1.0 V for pulse width ï£ 50 ns.
2. VIH min for VCC = 3.6 to 5.5 V is 2.2 V.
3. VIH max: VCC + 1.0 V for pulse width ï£ 50 ns.
4. This function is supported by only the R1EV58256BxxR series
5. Refer to the recommended AC operating condition during read and write operation.
Max
5.5
0
0.8
VCC + 0.3*3
VCC + 1.0
+85
Unit
V
V
V
V
V
ï°C
R10DS0208EJ0200 Rev.2.00
May 12, 2016
Page 4 of 23
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