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| R1EV58256BXXN Datasheet, PDF (3/25 Pages) Renesas Technology Corp – 256K EEPROM (32-Kword × 8-bit) | |||
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R1EV58256BxxN Series/R1EV58256BxxR Series
Pin Description
Pin name
A0 to A14
Address input
I/O0 to I/O7
Data input/output
OE
Output enable
CE
Chip enable
WE
Write enable
VCC
VSS
RDY/Busy*1
RES*1
Power supply
Ground
Ready busy
Reset
NC
No connection
Note: 1. This function is supported by only the R1EV58256BxxR series.
Function
Block Diagram
Note: 1. This function is supported by only the R1EV58256BXXR series.
V CC
V SS
RES *1
OE
CE
WE
RES *1
A0
to
A5
A6
to
A14
High voltage generator
Voltage detector
Control logic and timing
Address
buffer and
latch
Y decoder
X decoder
I/O0 to I/O7
I/O buffer
and
input latch
Y gating
Memory array
Data latch
RDY/Busy *1
R10DS0208EJ0200 Rev.2.00
May 12, 2016
Page 3 of 23
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