PD44165084B_15 Datasheet, PDF (1/40 Pages) Renesas Technology Corp – 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

μPD44165084B
μPD44165094B
μPD44165184B
μPD44165364B
18M-BIT QDR^TM II SRAM
4-WORD BURST OPERATION
Datasheet
R10DS0018EJ0200
Rev.2.00
October 6, 2011
Description
The μPD44165084B is a 2,097,152-word by 8-bit, the μPD44165094B is a 2,097,152-word by 9-bit, the
μPD44165184B is a 1,048,576-word by 18-bit and the μPD44165364B is a 524,288-word by 36-bit synchronous
quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory
cell.
The μPD44165084B, μPD44165094B, μPD44165184B and μPD44165364B integrate unique synchronous
peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are
latched on the positive edge of K and K#. These products are suitable for application which require synchronous
operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-
pin PLASTIC BGA.
Features
• 1.8 ± 0.1 V power supply
• 165-pin PLASTIC BGA (13 x 15)
• HSTL interface
• PLL circuitry for wide output data valid window and future frequency scaling
• Separate independent read and write data ports with concurrent transactions
• 100% bus utilization DDR READ and WRITE operation
• Four-tick burst for reduced address frequency
• Two input clocks (K and K#) for precise DDR timing at clock rising edges only
• Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
• Internally self-timed write control
• Clock-stop capability. Normal operation is restored in 20 μs after clock is resumed.
• User programmable impedance output (35 to 70 Ω)
• Fast clock cycle time : 3.3 ns (300 MHz), 3.5 ns (287 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
• Simple control logic for easy depth expansion
• JTAG 1149.1 compatible test access port
R10DS0018EJ0200 Rev.2.00
October 6, 2011
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