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HYB25D512800BT Datasheet, PDF (3/38 Pages) Infineon Technologies AG – 512Mbit Double Data Rate SDRAM | |||
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Internet Data Sheet
1
Overview
HYB25D512[40/16/80]0B[E/F/C/T](L)
Double-Data-Rate SDRAM
This chapter gives an overview of the 512-Mbit Double-Data-Rate SDRAM product family and describes its main
characteristics
1.1
Features
⢠Double data rate architecture: two data transfers per clock cycle
⢠Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
⢠DQS is edge-aligned with data for reads and is center-aligned with data for writes
⢠Differential clock inputs (CK and CK)
⢠Four internal banks for concurrent operation
⢠Data mask (DM) for write data
⢠DLL aligns DQ and DQS transitions with CK transitions
⢠Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
⢠Burst Lengths: 2, 4, or 8
⢠CAS Latency: (1.5), 2, 2.5, 3
⢠Auto Pre charge option for each burst access
⢠Auto Refresh and Self Refresh Modes
⢠RAS-lockout supported tRAP=tRCD
⢠7.8 µs Maximum Average Periodic Refresh Interval
⢠2.5 V (SSTL_2 compatible) I/O
⢠VDDQ = 2.5 V ± 0.2 V and 2.6 V ± 0.1 V for DDR400
⢠VDD = 2.5 V ± 0.2 V and 2.6 V ± 0.1 V for DDR400
⢠P-TFBGA-60 and P-TSOPII-66 package
Part Number Speed Code
Speed Grade
max. Clock
Frequency
Component
Module
@CL3
@CL2.5
@CL2
fCK3
fCK2.5
fCK2
â5
DDR400B
PC3200â3033
200
166
133
â6
DDR333B
PC2700â2533
166
166
133
TABLE 1
Performance
â7
Unit
DDR266A
PC2100â2033
â
143
133
â
â
MHz
MHz
MHz
Rev. 1.63, 2006-09
3
03062006-PFFJ-YJY2
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