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HYB25D512800BT Datasheet, PDF (25/38 Pages) Infineon Technologies AG – 512Mbit Double Data Rate SDRAM
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Internet Data Sheet
HYB25D512[40/16/80]0B[E/F/C/T](L)
Double-Data-Rate SDRAM
Parameter
Symbol
TABLE 18
Electrical Characteristics and DC Operating Conditions
Values
Unit Note1)/Test Condition
Min.
Typ.
Max.
Device Supply Voltage
Device Supply Voltage
Output Supply Voltage
Output Supply Voltage
EEPROM supply voltage
Supply Voltage, I/O Supply
Voltage
Input Reference Voltage
I/O Termination Voltage
(System)
VDD
VDD
VDDQ
VDDQ
VDDSPD
VSS,
VSSQ
VREF
VTT
2.3
2.5
2.7
V
2.5
2.6
2.7
V
2.3
2.5
2.7
V
2.5
2.6
2.7
V
2.3
2.5
3.6
V
0
—
0
V
0.49 × VDDQ 0.5 × VDDQ 0.51 × VDDQ V
VREF – 0.04 —
VREF + 0.04 V
fCK ≤ 166 MHz
fCK > 166 MHz 2)
fCK ≤ 166 MHz 3)
fCK > 166 MHz 2)3)
—
—
4)
5)
Input High (Logic1) Voltage
Input Low (Logic0) Voltage
Input Voltage Level,
CK and CK Inputs
VIH(DC)
VIL(DC)
VIN(DC)
VREF + 0.15 —
–0.3
—
–0.3
—
VDDQ + 0.3 V
6)
VREF – 0.15 V
6)
VDDQ + 0.3 V
6)
Input Differential Voltage,
VID(DC)
0.36
—
CK and CK Inputs
VDDQ + 0.6 V
6)7)
VI-Matching Pull-up Current VIRatio 0.71
—
1.4
to Pull-down Current
—
8)
Input Leakage Current
II
–2
—
2
µA Any input 0 V ≤ VIN ≤ VDD;
All other pins not under test
= 0 V 9)
Output Leakage Current
IOZ
–5
Output High Current, Normal IOH
—
Strength Driver
—
5
µA DQs are disabled;
0 V ≤ VOUT ≤ VDDQ 9)
—
–16.2
mA VOUT = 1.95 V
Output Low Current, Normal IOL
16.2
—
—
Strength Driver
mA VOUT = 0.35 V
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V; VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V (DDR400);
2) DDR400 conditions apply for all clock frequencies above 166 MHz
3) Under all conditions, VDDQ must be less than or equal to VDD.
4) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC). VREF is also expected to track noise variations in VDDQ.
5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and
must track variations in the DC level of VREF.
6) Inputs are not recognized as valid until VREF stabilizes.
7) VID is the magnitude of the difference between the input level on CK and the input level on CK.
8) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and
voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the maximum difference between
pull-up and pull-down drivers due to process variation.
9) Values are shown per pin.
Rev. 1.63, 2006-09
25
03062006-PFFJ-YJY2
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