HYB25D512800BT Datasheet, PDF (23/38 Pages) Infineon Technologies AG – 512Mbit Double Data Rate SDRAM

Internet Data Sheet
HYB25D512[40/16/80]0B[E/F/C/T](L)
Double-Data-Rate SDRAM
4
Electrical Characteristics
4.1
Operating Conditions
Parameter
Voltage on I/O pins relative to V_SS
Voltage on inputs relative to V_SS
Voltage on V_DD supply relative to V_SS
Voltage on V_DDQ supply relative to V_SS
Operating temperature (ambient)
Storage temperature (plastic)
Power dissipation (per SDRAM component)
Short circuit output current
Symbol
V_IN, V_OUT
min.
–0.5
V_IN
–1
V_DD
–1
V_DDQ
–1
T_A
0
T_STG
-55
P_D
–
I_OUT
–
TABLE 16
Absolute Maximum Ratings
Values
typ.
max.
Unit Note/ Test
Condition
–
V_DDQ + V
–
0.5
–
+3.6
V–
–
+3.6
V–
–
+3.6
V–
–
+70
°C –
–
+150
°C –
1
–
W–
50
–
mA –
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This is a stress
rating only, and functional operation should be restricted to recommended operation conditions. Exposure
to absolute maximum rating conditions for extended periods of time may affect device reliability and
exceeding only one of the values may cause irreversible damage to the integrated circuit.
Rev. 1.63, 2006-09
23
03062006-PFFJ-YJY2