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HYB25D128160C Datasheet, PDF (26/35 Pages) Qimonda AG – 128-Mbit Double-Data-Rate SDRAM
Internet Data Sheet
HYB25D128xxxC[C/E/F/T](L)
128-Mbit Double-Data-Rate SDRAM
Parameter
Symbol –5
DDR400B
TABLE 22
AC Timing - Absolute Specifications
–6
DDR333
Unit Note1)/ Test
Condition
DQ output access time from CK/CK tAC
CK high-level width
tCH
Clock cycle time
tCK
CK low-level width
tCL
Auto precharge write recovery +
tDAL
precharge time
DQ and DM input hold time
DQ and DM input pulse width (each
input)
tDH
tDIPW
DQS output access time from CK/CK tDQSCK
DQS input low (high) pulse width
(write cycle)
tDQSL,H
DQS-DQ skew (DQS and associated tDQSQ
DQ signals)
DQS-DQ skew (DQS and associated tDQSQ
DQ signals)
Write command to 1st DQS latching tDQSS
transition
DQ and DM input setup time
tDS
DQS falling edge hold time from CK tDSH
(write cycle)
DQS falling edge to CK setup time tDSS
(write cycle)
Clock Half Period
tHP
Data-out high-impedance time from tHZ
CK/CK
Address and control input hold time tIH
Min.
Max. Min.
Max.
–0.5
+0.5 –0.7
+0.7
ns
2)3)4)5)
0.45
0.55 0.45
0.55 tCK —
5
8
6
12
ns CL = 3.0
6
12
6
12
ns CL = 2.5
7.5
12
7.5
12
ns CL = 2.0
0.45
0.55
(tWR/tCK)+(tRP/tCK)
0.45
0.55
(tWR/tCK)+(tRP/tCK)
tCK —
tCK 6)
0.4
—
0.45
—
ns —
1.75
—
1.75
—
ns —
–0.5
+0.5 –0.6
+0.6 ns —
0.35
—
0.35
—
tCK —
—
+0.40 —
+0.40 ns TFBGA
—
+0.40 —
+0.45 ns TSOPII
0.72
1.25
0.4
—
0.2
—
0.2
—
min. (tCL, tCH) —
—
+0.7
0.75
1.25
0.45
—
0.2
—
0.2
—
min. (tCL, tCH) —
–0.7
+0.7
tCK —
ns —
tCK —
tCK —
ns —
ns 7)
0.6
—
0.75
—
ns fast slew rate
8)
0.7
—
0.8
—
ns slow slew rate
Control and Addr. input pulse width tIPW
2.2
(each input)
Address and control input setup time tIS
0.6
—
2.2
—
0.75
—
ns 9)
—
ns fast slew rate
0.7
—
0.8
—
ns slow slew rate
Rev. 1.6, 2007-02
26
03292006-U5AN-6TI1