HYS72T64400HFD Datasheet, PDF (16/42 Pages) Qimonda AG – 240-Pin Fully-Buffered DDR2 SDRAM Modules

Internet Data Sheet
HYS72T[64/128/256]4[00/20]HFD–[3S/3.7]–A
4
Electrical Characteristics
4.1
Operating Conditions
Symbol
Parameter
Rating
TABLE 8
Absolute Maximum Ratings
Unit Note
Min. Max.
V_DD
Voltage on V_DD pin relative to V_SS
–0.5 +2.3
V
1)
V_CC
Voltage on V_CC pin relative to V_SS
–0,3 1.75
V
V_DDQ
Voltage on V_DDQ pin relative to V_SS
–0.5 +2.3
V
1)2)
V_DDL
Voltage on V_DDL pin relative to V_SS
–0.5 +2.3
V
1)2)
V_IN, V_OUT
Voltage on any pin relative to V_SS
–0.3 +1.75 V
1)
T_STG
Storage Temperature
–55
+100
°C
1)2)
V_TT
Voltage on V_TT pin relative to V_SS
–0.5 2.3
V
1) When V_DD and V_DDQ and V_DDL are less than 500 mV; V_REF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Symbol Parameter
Values
TABLE 9
Operating Temperature Range
Unit Note
Min.
Max.
T_CASE
DRAM Component Case Temperature Range
0
+95
°C
1)2)3)
T_CASE
AMB Component Case Temperature Range
0
+110
°C
1)
1) Within the DRAM Component Case Temperature range all DRAM specification will be supported.
2) Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below 85 °C case
temperature before initiating self-refresh operation.
3) Above 85 °C DRAM case temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs.
Rev. 1.2, 2006-11
16
03292006-GUME-ERC3