PSMN4R0-60YS_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 4.0 mΩ standard level FET

NXP Semiconductors
10
V_GS
(V)
8
6
4
30 V
12 V
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V_DS = 48 V
2
0
0
20
40
60
Q_G (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
PSMN4R0-60YS
N-channel LFPAK 60 V, 4.0 mΩ standard level FET
10⁴
C
(pF)
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C_iss
10³
C_oss
C_rss
10²
10^{- 1}
10
V_DS (V) ¹⁰³
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
100
I_S
(A)
80
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60
40
20
T_j = 175 °C
T_j = 25 °C
0
0
0.3
0.6
0.9
1.2
V_SD (V)
Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN4R0-60YS
Product data sheet
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14 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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